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Analytical Models for Total Dose Ionization Effects in MOS Devices

2008
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Release : 2008
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Book Synopsis Analytical Models for Total Dose Ionization Effects in MOS Devices by :

Download or read book Analytical Models for Total Dose Ionization Effects in MOS Devices written by . This book was released on 2008. Available in PDF, EPUB and Kindle. Book excerpt: MOS devices are susceptible to damage by ionizing radiation due to charge buildup in gate, field and SOI buried oxides. Under positive bias holes created in the gate oxide will transport to the Si / SiO2 interface creating oxide-trapped charge. As a result of hole transport and trapping, hydrogen is liberated in the oxide which can create interface-trapped charge. The trapped charge will affect the threshold voltage and degrade the channel mobility. Neutralization of oxidetrapped charge by electron tunneling from the silicon and by thermal emission can take place over long periods of time. Neutralization of interface-trapped charge is not observed at room temperature. Analytical models are developed that account for the principal effects of total dose in MOS devices under different gate bias. The intent is to obtain closed-form solutions that can be used in circuit simulation. Expressions are derived for the aging effects of very low dose rate radiation over long time periods.

Ionizing Radiation Effects in MOS Devices and Circuits

1989-04-18 Technology & Engineering
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Release : 1989-04-18
Genre : Technology & Engineering
Kind : eBook
Book Rating : 936/5 ( reviews)

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Book Synopsis Ionizing Radiation Effects in MOS Devices and Circuits by : T. P. Ma

Download or read book Ionizing Radiation Effects in MOS Devices and Circuits written by T. P. Ma. This book was released on 1989-04-18. Available in PDF, EPUB and Kindle. Book excerpt: The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.

Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

2015
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Release : 2015
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Book Synopsis Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies by :

Download or read book Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies written by . This book was released on 2015. Available in PDF, EPUB and Kindle. Book excerpt: This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential ([psi]s) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.

Ionizing Radiation Effects in MOS Oxides

1999 Technology & Engineering
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Release : 1999
Genre : Technology & Engineering
Kind : eBook
Book Rating : 266/5 ( reviews)

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Book Synopsis Ionizing Radiation Effects in MOS Oxides by : Timothy R. Oldham

Download or read book Ionizing Radiation Effects in MOS Oxides written by Timothy R. Oldham. This book was released on 1999. Available in PDF, EPUB and Kindle. Book excerpt: This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.

Total Ionizing Dose Effects on MOS and Bipolar Devices in the Natural Space Radiation Environment

1998
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Release : 1998
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Book Synopsis Total Ionizing Dose Effects on MOS and Bipolar Devices in the Natural Space Radiation Environment by :

Download or read book Total Ionizing Dose Effects on MOS and Bipolar Devices in the Natural Space Radiation Environment written by . This book was released on 1998. Available in PDF, EPUB and Kindle. Book excerpt: Mechanisms that control the response of MOS and bipolar devices to ionizing radiation in the natural space environment are briefly reviewed. Standard tests based on room-temperature irradiation and elevated temperature annealing are described for MOS devices to bound the effects of oxide and interface-trap charge in space. For bipolar devices that exhibit enhanced low-dose-rate sensitivity, a standard test equivalent to that developed for MOS devices is not available. However, screening techniques based on room temperature and/or elevated temperature irradiations are described which can minimize the risk to spacecraft and satellite electronics from this phenomenon.

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