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Ionizing Radiation Effects In Mos Oxides

2000-01-25 Science
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Release : 2000-01-25
Genre : Science
Kind : eBook
Book Rating : 685/5 ( reviews)

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Book Synopsis Ionizing Radiation Effects In Mos Oxides by : Timothy R Oldham

Download or read book Ionizing Radiation Effects In Mos Oxides written by Timothy R Oldham. This book was released on 2000-01-25. Available in PDF, EPUB and Kindle. Book excerpt: This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.

Permanent and Transient Radiation Effects on Thin-Oxide (200-A) MOS Transistors

1976
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Release : 1976
Genre :
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Book Synopsis Permanent and Transient Radiation Effects on Thin-Oxide (200-A) MOS Transistors by : Stewart Share

Download or read book Permanent and Transient Radiation Effects on Thin-Oxide (200-A) MOS Transistors written by Stewart Share. This book was released on 1976. Available in PDF, EPUB and Kindle. Book excerpt: An approach for hardening metal oxide semiconductor (MOS) transistors to ionizing radiation by reducing the thickness of the gate oxide is presented. It is shown that Si gate, n-channel MOS field-effect transistors with oxides 200 A thick continue to operate in the enhancement mode after irradiation to 1,000,000 rads (Si) with a positive bias applied to the gate during the irradiation. This represents a considerable improvement over conventional thick-oxide (approximately 1000-A) devices, which go into the depletion mode of operation at 100,000 rads (Si). The thin-oxide devices after exposure to pulsed ionizing radiation showed improved performance over that of thick-oxide devices. It was found also that device operation following irradiation depended on the source-drain spacing (Channel length): Shortening the channel length leads to an increased shift of the threshold voltage induced by irradiation. (Author).

Ionizing Radiation Effects in MOS Devices and Circuits

1989-04-18 Technology & Engineering
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Release : 1989-04-18
Genre : Technology & Engineering
Kind : eBook
Book Rating : 936/5 ( reviews)

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Book Synopsis Ionizing Radiation Effects in MOS Devices and Circuits by : T. P. Ma

Download or read book Ionizing Radiation Effects in MOS Devices and Circuits written by T. P. Ma. This book was released on 1989-04-18. Available in PDF, EPUB and Kindle. Book excerpt: The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.

Analytical Models for Total Dose Ionization Effects in MOS Devices

2008
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Release : 2008
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Book Synopsis Analytical Models for Total Dose Ionization Effects in MOS Devices by :

Download or read book Analytical Models for Total Dose Ionization Effects in MOS Devices written by . This book was released on 2008. Available in PDF, EPUB and Kindle. Book excerpt: MOS devices are susceptible to damage by ionizing radiation due to charge buildup in gate, field and SOI buried oxides. Under positive bias holes created in the gate oxide will transport to the Si / SiO2 interface creating oxide-trapped charge. As a result of hole transport and trapping, hydrogen is liberated in the oxide which can create interface-trapped charge. The trapped charge will affect the threshold voltage and degrade the channel mobility. Neutralization of oxidetrapped charge by electron tunneling from the silicon and by thermal emission can take place over long periods of time. Neutralization of interface-trapped charge is not observed at room temperature. Analytical models are developed that account for the principal effects of total dose in MOS devices under different gate bias. The intent is to obtain closed-form solutions that can be used in circuit simulation. Expressions are derived for the aging effects of very low dose rate radiation over long time periods.

Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices

2004-07-29 Technology & Engineering
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Release : 2004-07-29
Genre : Technology & Engineering
Kind : eBook
Book Rating : 153/5 ( reviews)

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Book Synopsis Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices by : Ronald D Schrimpf

Download or read book Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices written by Ronald D Schrimpf. This book was released on 2004-07-29. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.

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