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Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

2015
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Release : 2015
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Book Synopsis Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies by :

Download or read book Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies written by . This book was released on 2015. Available in PDF, EPUB and Kindle. Book excerpt: This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential ([psi]s) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.

Analytical Models for Total Dose Ionization Effects in MOS Devices

2008
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Release : 2008
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Book Synopsis Analytical Models for Total Dose Ionization Effects in MOS Devices by :

Download or read book Analytical Models for Total Dose Ionization Effects in MOS Devices written by . This book was released on 2008. Available in PDF, EPUB and Kindle. Book excerpt: MOS devices are susceptible to damage by ionizing radiation due to charge buildup in gate, field and SOI buried oxides. Under positive bias holes created in the gate oxide will transport to the Si / SiO2 interface creating oxide-trapped charge. As a result of hole transport and trapping, hydrogen is liberated in the oxide which can create interface-trapped charge. The trapped charge will affect the threshold voltage and degrade the channel mobility. Neutralization of oxidetrapped charge by electron tunneling from the silicon and by thermal emission can take place over long periods of time. Neutralization of interface-trapped charge is not observed at room temperature. Analytical models are developed that account for the principal effects of total dose in MOS devices under different gate bias. The intent is to obtain closed-form solutions that can be used in circuit simulation. Expressions are derived for the aging effects of very low dose rate radiation over long time periods.

Ionizing Radiation Effects in MOS Devices and Circuits

1989-04-18 Technology & Engineering
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Release : 1989-04-18
Genre : Technology & Engineering
Kind : eBook
Book Rating : 936/5 ( reviews)

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Book Synopsis Ionizing Radiation Effects in MOS Devices and Circuits by : T. P. Ma

Download or read book Ionizing Radiation Effects in MOS Devices and Circuits written by T. P. Ma. This book was released on 1989-04-18. Available in PDF, EPUB and Kindle. Book excerpt: The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.

Nanotechnology in Electronics

2022-10-07 Technology & Engineering
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Release : 2022-10-07
Genre : Technology & Engineering
Kind : eBook
Book Rating : 235/5 ( reviews)

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Book Synopsis Nanotechnology in Electronics by : Visakh P. M.

Download or read book Nanotechnology in Electronics written by Visakh P. M.. This book was released on 2022-10-07. Available in PDF, EPUB and Kindle. Book excerpt: Nanotechnology in Electronics Enables readers to understand and apply state-of-the-art concepts surrounding modern nanotechnology in electronics Nanotechnology in Electronics summarizes numerous research accomplishments in the field, covering novel materials for electronic applications (such as graphene, nanowires, and carbon nanotubes) and modern nanoelectronic devices (such as biosensors, optoelectronic devices, flexible electronics, nanoscale batteries, and nanogenerators) that are used in many different fields (such as sensor technology, energy generation, data storage and biomedicine). Edited by four highly qualified researchers and professionals in the field, other specific sample topics covered in Nanotechnology in Electronics include: Graphene-based nanoelectronics biosensors, including the history, properties, and fundamentals of graphene, plus fundamentals of graphene derivatives and the synthesis of graphene Zinc oxide piezoelectronic nanogenerators for low frequency applications, with an introduction to zinc oxide and zinc oxide piezoelectric nanogenerators Investigation of the hot junctionless mosfets, including an overview of the junctionless paradigm and a simulation framework of the hot carrier degradation Conductive nanomaterials for printed/flexible electronics application and metal oxide semiconductors for non-invasive diagnosis of breast cancer The fundamental aspects and applications of multiferroic-based spintronic devices and quartz tuning fork based nanosensors. Containing in-depth information on the topic and written intentionally to help with the practical application of concepts described within, Nanotechnology in Electronics is a must-have reference for materials scientists, electronics engineers, and engineering scientists who wish to understand and harness the state of the art in the field.

Total Ionizing Dose Effects on MOS and Bipolar Devices in the Natural Space Radiation Environment

1998
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Release : 1998
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Book Synopsis Total Ionizing Dose Effects on MOS and Bipolar Devices in the Natural Space Radiation Environment by :

Download or read book Total Ionizing Dose Effects on MOS and Bipolar Devices in the Natural Space Radiation Environment written by . This book was released on 1998. Available in PDF, EPUB and Kindle. Book excerpt: Mechanisms that control the response of MOS and bipolar devices to ionizing radiation in the natural space environment are briefly reviewed. Standard tests based on room-temperature irradiation and elevated temperature annealing are described for MOS devices to bound the effects of oxide and interface-trap charge in space. For bipolar devices that exhibit enhanced low-dose-rate sensitivity, a standard test equivalent to that developed for MOS devices is not available. However, screening techniques based on room temperature and/or elevated temperature irradiations are described which can minimize the risk to spacecraft and satellite electronics from this phenomenon.

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