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Author : Andrew M. Greene
Release : 2015
Genre : Compound semiconductors
Kind : eBook
Book Rating : /5 ( reviews)
Book Synopsis The Development of III-V Semiconductor MOSFETs for Future CMOS Applications by : Andrew M. Greene
Download or read book The Development of III-V Semiconductor MOSFETs for Future CMOS Applications written by Andrew M. Greene. This book was released on 2015. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Serge Oktyabrsky
Release : 2010-03-16
Genre : Technology & Engineering
Kind : eBook
Book Rating : 478/5 ( reviews)
Book Synopsis Fundamentals of III-V Semiconductor MOSFETs by : Serge Oktyabrsky
Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky. This book was released on 2010-03-16. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author : Padmaja Nagaiah
Release : 2012
Genre : Metal oxide semiconductor field-effect transistors
Kind : eBook
Book Rating : /5 ( reviews)
Book Synopsis Development of III-V P-MOSFETs with High-kappa Gate Stack for Future CMOS Applications by : Padmaja Nagaiah
Download or read book Development of III-V P-MOSFETs with High-kappa Gate Stack for Future CMOS Applications written by Padmaja Nagaiah. This book was released on 2012. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jacopo Franco
Release : 2013-10-19
Genre : Technology & Engineering
Kind : eBook
Book Rating : 632/5 ( reviews)
Book Synopsis Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications by : Jacopo Franco
Download or read book Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications written by Jacopo Franco. This book was released on 2013-10-19. Available in PDF, EPUB and Kindle. Book excerpt: Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.
Author : Tingkai Li
Release : 2016-04-19
Genre : Science
Kind : eBook
Book Rating : 232/5 ( reviews)
Book Synopsis III-V Compound Semiconductors by : Tingkai Li
Download or read book III-V Compound Semiconductors written by Tingkai Li. This book was released on 2016-04-19. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
