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Strain-Induced Effects in Advanced MOSFETs

2011-01-06 Technology & Engineering
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Release : 2011-01-06
Genre : Technology & Engineering
Kind : eBook
Book Rating : 827/5 ( reviews)

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Book Synopsis Strain-Induced Effects in Advanced MOSFETs by : Viktor Sverdlov

Download or read book Strain-Induced Effects in Advanced MOSFETs written by Viktor Sverdlov. This book was released on 2011-01-06. Available in PDF, EPUB and Kindle. Book excerpt: Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

Strain Induced Effects on Lateral Power MOSFETs

2009
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Release : 2009
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Book Synopsis Strain Induced Effects on Lateral Power MOSFETs by : Jingjing Michelle Liu

Download or read book Strain Induced Effects on Lateral Power MOSFETs written by Jingjing Michelle Liu. This book was released on 2009. Available in PDF, EPUB and Kindle. Book excerpt: Experiments demonstrate that strain breaks the on-resistance/breakdown voltage tradeoff by enhancing on-resistance while maintaining breakdown voltage. There are differences between logic MOSFETs and power MOSFETs. Experimental results for n-type power MOSFETs show reduced enhancement with stress. This is explained by effect of vertical spreading of carriers into the substrate. On-resistance distribution has therefore been studied and piezoresistance coefficients are modeled to validate experimental results. In summary, this work proves strain to be beneficial in improving lateral power MOSFETs performance and provides the most favorable channel direction and stress type for the first time.

Strain-Engineered MOSFETs

2018-10-03 Technology & Engineering
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Release : 2018-10-03
Genre : Technology & Engineering
Kind : eBook
Book Rating : 475/5 ( reviews)

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Book Synopsis Strain-Engineered MOSFETs by : C.K. Maiti

Download or read book Strain-Engineered MOSFETs written by C.K. Maiti. This book was released on 2018-10-03. Available in PDF, EPUB and Kindle. Book excerpt: Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.

Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting

2014-08-28 Technology & Engineering
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Release : 2014-08-28
Genre : Technology & Engineering
Kind : eBook
Book Rating : 041/5 ( reviews)

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Book Synopsis Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting by : Alexei Nazarov

Download or read book Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting written by Alexei Nazarov. This book was released on 2014-08-28. Available in PDF, EPUB and Kindle. Book excerpt: This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between “More Moore” and “More than Moore” are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.

Strain Effects on the Performance of Silicon MOSFETs

2009
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Release : 2009
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Book Synopsis Strain Effects on the Performance of Silicon MOSFETs by : Xiaodong Yang

Download or read book Strain Effects on the Performance of Silicon MOSFETs written by Xiaodong Yang. This book was released on 2009. Available in PDF, EPUB and Kindle. Book excerpt: A self-consistent solution to the Poisson and Schro umlautdinger's equation considering the strain Hamiltonian combined with the transfer matrix method are used for modeling the tunneling process. Hole and electron mobility is studied for strained p and n-channel MOSFETs at low temperature. Longitudinal compressive stress increased hole mobility enhancement is observed as temperature is lowed from 300K to 87K. With a six band k.p model and finite difference formalism, comparison with calculation suggests hole mobility is phonon-limited at room temperatures, while it is limited by both surface roughness and phonon scattering around 87K. Strain induced mobility enhancement at low temperature arises from the reduction of the average hole conductive effective mass due to band warping. However, surface roughness reduction is the dominant physical mechanism for n-channel MOSFETs. Several physical models are discussed and a reasonable modification of present model is presented. Metal gate induced effective work function change provide a good candidate for work function tuning which is one of the most challenge parts for the present high-k/metal gate devices. Both external mechanical stress and process induced large stress indicated that the effective work function always decrease with the applied stresses regardless the type of stresses. Although the stress induced by the TiN gate strongly depends on the thermal treatment, thermal annealing process generates tension inside the gate. Bowing technique and charge pumping method are used for stress and interface state measurement, respectively. It is indicated that the EWF decrease with the reduction of metal gate thickness and the interface state induced donor-like charge generation is the dominant physical mechanism.

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