1# Library to Find Best eBook for Read
Author : David Quest Kelly
Release : 2003
Genre :
Kind : eBook
Book Rating : /5 ( reviews)
Book Synopsis Hot-carrier reliability of strain-engineered MOSFETs by : David Quest Kelly
Download or read book Hot-carrier reliability of strain-engineered MOSFETs written by David Quest Kelly. This book was released on 2003. Available in PDF, EPUB and Kindle. Book excerpt:
Author : C.K. Maiti
Release : 2018-10-03
Genre : Technology & Engineering
Kind : eBook
Book Rating : 475/5 ( reviews)
Book Synopsis Strain-Engineered MOSFETs by : C.K. Maiti
Download or read book Strain-Engineered MOSFETs written by C.K. Maiti. This book was released on 2018-10-03. Available in PDF, EPUB and Kindle. Book excerpt: Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
Author : SeokWon Abraham Kim
Release : 1999
Genre :
Kind : eBook
Book Rating : /5 ( reviews)
Book Synopsis Hot-carrier Reliability of MOSFETs at Room and Cryogenic Temperature by : SeokWon Abraham Kim
Download or read book Hot-carrier Reliability of MOSFETs at Room and Cryogenic Temperature written by SeokWon Abraham Kim. This book was released on 1999. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Celisa Kelly Date
Release : 1993
Genre :
Kind : eBook
Book Rating : /5 ( reviews)
Book Synopsis Hot Carrier Reliability Characterization of 0.25 Micrometer MOSFETs with Alternative Gate Dielectrics by : Celisa Kelly Date
Download or read book Hot Carrier Reliability Characterization of 0.25 Micrometer MOSFETs with Alternative Gate Dielectrics written by Celisa Kelly Date. This book was released on 1993. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jacopo Franco
Release : 2013-10-19
Genre : Technology & Engineering
Kind : eBook
Book Rating : 632/5 ( reviews)
Book Synopsis Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications by : Jacopo Franco
Download or read book Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications written by Jacopo Franco. This book was released on 2013-10-19. Available in PDF, EPUB and Kindle. Book excerpt: Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.
