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Wide Bandgap Device-based Power Converter for Integrated Motor Drive System

2020 Electric current converters
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Release : 2020
Genre : Electric current converters
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Book Synopsis Wide Bandgap Device-based Power Converter for Integrated Motor Drive System by : Tianyu Chen

Download or read book Wide Bandgap Device-based Power Converter for Integrated Motor Drive System written by Tianyu Chen. This book was released on 2020. Available in PDF, EPUB and Kindle. Book excerpt: Power electronics converters have been widely applied to motor drive systems to decrease the energy consumption by allowing for variable frequency operation. With the requirement of carbon emission reduction, variable frequency drive system will become a trend in the future. Conventional power converters employ Silicon IGBT and are physically separated from the electric machines. With the development of wide bandgap power semiconductors, such as SiC MOSFET and GaN HEMT, it becomes possible to build high temperature, high power density converter and integrate the power converter directly into housing of the motors. However, because of the limited space, high temperature, and high magnetic flux density inside electric machines, integration of power converter into a motor becomes a challenging work. This study presents the research on high power density converter and the integration of power converter into an induction motor. In this study, two prototypes of GaN HEMT-based power converter are built and integrated into a 3-hp induction motor. The PCB layout of power stage is investigated and optimized. The leakage magnetic flux on the surface of the power converter is simulated and experimentally measured. To facilitate the thermal dissipation of the power converter, the motor endcap is redesigned and the thermal analysis is performed for the integrated motor drive system as a whole. The topologies of power converter with an active front-end rectifier are investigated and compared, and the totem-pole rectifier with power pulsation buffer is selected as the front-end stage. With the GaN converter integrated into the induction motor, the variable frequency operation of the integrated motor drive system is validated through experimental test..

Investigation of Current Source Inverter Using Wide Bandgap Devices for Integrated Motor Drive Applications

2021
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Release : 2021
Genre :
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Book Synopsis Investigation of Current Source Inverter Using Wide Bandgap Devices for Integrated Motor Drive Applications by : Hang Dai

Download or read book Investigation of Current Source Inverter Using Wide Bandgap Devices for Integrated Motor Drive Applications written by Hang Dai. This book was released on 2021. Available in PDF, EPUB and Kindle. Book excerpt: This research program has investigated the introduction of wide bandgap (WBG) power semiconductor switches into current-source inverters (CSIs) to achieve several performance advantages over conventional voltage-source inverters (VSIs) in motor drive applications, with a particular focus on integrated motor drives (IMDs).A detailed analysis comparing two-level CSIs and two-level VSIs using WBG devices is presented, showing that CSIs offer several advantages over the baseline VSI topology when WBG devices are introduced at high switching frequencies. These include sinusoidal output voltage and current waveforms, improved compatibility with elevated temperature operation, lower leakage current and conducted common-mode (CM) electromagnetic interference (EMI), and high power density values that make them appealing for IMD applications. However, CSIs require switches with reverse-voltage-blocking (RVB) capability. In the absence of monolithic RVB switch devices, several hybrid switch configurations are presented that provide this RVB capability as reverse-blocking (RB) or bidirectional (BD) switches. Several CSI topologies and modulation algorithms are presented using these switches. A new space vector pulsewidth modulation (SVPWM) algorithm is proposed for the conventional CSI topology (H6-CSI) using six BD switches that prevents transient current spikes and voltage pulses. A new modulation scheme is proposed that enables the H7-CSI topology using six BD switches and one RB switch to achieve higher efficiency. A new high-efficiency CSI topology (H8-CSI) using six BD switches is proposed that adds an eighth active switch to the H7-CSI topology, enabling simplified gate signals. Analysis and suppression of CM-EMI in WBG-CSIs have been investigated. A new equivalent circuit (EQC) that can accurately and rapidly predict the CM-EMI frequency spectra is proposed. The CM-EMI of a three-phase current-source converter (CSC) system consisting of both rectifier and inverter stages has also been evaluated using an extended EQC. These EQCs have been successfully utilized to analyze and suppress the CM-EMI spectral envelopes in both CSIs and CSCs. Finally, a high-performance WBG-CSI integrated into the housing of a 3kW PM synchronous motor has been developed and tested. The measured performance of the CSI-IMD confirms the CSI's ability to simultaneously achieve high efficiency, high power density, and low CM-EMI while delivering high-quality sinusoidal motor excitation waveforms.

Wide Bandgap Semiconductor-Based Power Converters for Electric Vehicle Applications

2022 Electric current converters
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Release : 2022
Genre : Electric current converters
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Book Synopsis Wide Bandgap Semiconductor-Based Power Converters for Electric Vehicle Applications by :

Download or read book Wide Bandgap Semiconductor-Based Power Converters for Electric Vehicle Applications written by . This book was released on 2022. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap (WBG) semiconductor materials allow higher power and voltage, faster and more reliable power electronic devices. These characteristics lead to a massive improvement in power converters, especially for electric vehicles (EV) applications. As a result, new opportunities for high efficiency and power density is coming with the development of WBG power semiconductor. This paper introduces the application of WBG devices in power converters of EV. The EV development trend and the related circuit diagram of an EV system have been introduced. Serval typical power converters' topologies have been discussed. Meanwhile, WBG devices also bring challenges to a high voltage and frequency design. High current and voltage levels need a more powerful heating system. A higher switching speed requires lower loop parasitic inductance. This paper discusses how to apply WBG devices in the power converter design and address these challenges. Finally, The reliability test method of power converters has been discussed. The lifetime of all components in a power converter has been tested under different voltage and temperature levels. The failure reasons and influences parameters are analyzed.

Wide Bandgap Based Devices

2021-05-26 Technology & Engineering
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Release : 2021-05-26
Genre : Technology & Engineering
Kind : eBook
Book Rating : 660/5 ( reviews)

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Book Synopsis Wide Bandgap Based Devices by : Farid Medjdoub

Download or read book Wide Bandgap Based Devices written by Farid Medjdoub. This book was released on 2021-05-26. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Short Circuit Requirements of Power Converters based upon Wide-Bandgap Semiconductors

2021-01-01 Technology & Engineering
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Release : 2021-01-01
Genre : Technology & Engineering
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Book Rating : 772/5 ( reviews)

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Book Synopsis Short Circuit Requirements of Power Converters based upon Wide-Bandgap Semiconductors by : Douglas Pappis

Download or read book Short Circuit Requirements of Power Converters based upon Wide-Bandgap Semiconductors written by Douglas Pappis. This book was released on 2021-01-01. Available in PDF, EPUB and Kindle. Book excerpt: In power electronics designs, the evaluation and prediction of potential fault conditions on semiconductors is essential for achieving safe operation and reliability, being short circuit (SC) one of the most probable and destructive failures. Recent improvements on Wide-Bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium nitrite (GaN) enable power electronic designs with outstanding performance, reshaping the power electronics landscape. In comparison to Silicon (Si), SiC and GaN power semiconductors physically present smaller chip areas, higher maximum internal electric fields, and higher current densities. Such characteristics yield a much faster rise of the devices’ internal temperatures, worsening their SC performance. In this way, this dissertation consists of a comprehensive investigation about SC on SiC MOSFETs, GaN HEMT, and GaN E-HEMT transistors, as well as contextualizing their particularities on SC performance by comparison with that of Si IBGTs. Moreover, an investigation towards how to prevent SC occurrences besides a review of available SC protection methods is presented.

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