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The Production of Epitaxial Strained Silicon on Silicon Germanium Via Ultra High Vacuum Chemical Vapor Deposition

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Release : 2005
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Kind : eBook
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Book Synopsis The Production of Epitaxial Strained Silicon on Silicon Germanium Via Ultra High Vacuum Chemical Vapor Deposition by : Jerry Keybl

Download or read book The Production of Epitaxial Strained Silicon on Silicon Germanium Via Ultra High Vacuum Chemical Vapor Deposition written by Jerry Keybl. This book was released on 2005. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon-Germanium (SiGe) Nanostructures

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Release : 2011-02-26
Genre : Technology & Engineering
Kind : eBook
Book Rating : 425/5 ( reviews)

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Book Synopsis Silicon-Germanium (SiGe) Nanostructures by : Y. Shiraki

Download or read book Silicon-Germanium (SiGe) Nanostructures written by Y. Shiraki. This book was released on 2011-02-26. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

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Release : 2017-12-19
Genre : Technology & Engineering
Kind : eBook
Book Rating : 797/5 ( reviews)

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Book Synopsis SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by : John D. Cressler

Download or read book SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler. This book was released on 2017-12-19. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Chemical Vapor Deposition of Epitaxial Silicon-germanium-carbon Alloys Using Cyclopropane as a Carbon Source Gas

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Release : 1998
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Book Synopsis Chemical Vapor Deposition of Epitaxial Silicon-germanium-carbon Alloys Using Cyclopropane as a Carbon Source Gas by : James R. Dekker

Download or read book Chemical Vapor Deposition of Epitaxial Silicon-germanium-carbon Alloys Using Cyclopropane as a Carbon Source Gas written by James R. Dekker. This book was released on 1998. Available in PDF, EPUB and Kindle. Book excerpt:

Preparation and Investigation of Crystallographic Properties of Epitaxial Silicon-germanium Alloys Grown on Silicon Substrates by Chemical Vapor Deposition Using SiH4 and GeH4

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Release : 1985
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Book Synopsis Preparation and Investigation of Crystallographic Properties of Epitaxial Silicon-germanium Alloys Grown on Silicon Substrates by Chemical Vapor Deposition Using SiH4 and GeH4 by : Nat Hemasilpin

Download or read book Preparation and Investigation of Crystallographic Properties of Epitaxial Silicon-germanium Alloys Grown on Silicon Substrates by Chemical Vapor Deposition Using SiH4 and GeH4 written by Nat Hemasilpin. This book was released on 1985. Available in PDF, EPUB and Kindle. Book excerpt:

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