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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

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Release : 2013-11-11
Genre : Science
Kind : eBook
Book Rating : 742/5 ( reviews)

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Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface by : B.E. Deal

Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface written by B.E. Deal. This book was released on 2013-11-11. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--5

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Release : 2005-01-01
Genre : Dielectrics
Kind : eBook
Book Rating : 307/5 ( reviews)

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Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--5 by : Hisham Z. Massoud

Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--5 written by Hisham Z. Massoud. This book was released on 2005-01-01. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions places a focus on ultrathin gate dielectrics: novel technologies, characterization methods, process modeling, fundamental limits, and projections for scaling the gate oxide thickness.

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000

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Release : 2000
Genre : Nature
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Book Rating : /5 ( reviews)

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Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000 by : Hisham Z. Massoud

Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000 written by Hisham Z. Massoud. This book was released on 2000. Available in PDF, EPUB and Kindle. Book excerpt:

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2

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Release : 2013-11-09
Genre : Science
Kind : eBook
Book Rating : 885/5 ( reviews)

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Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 by : B.E. Deal

Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 written by B.E. Deal. This book was released on 2013-11-09. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.

The Physics of SiO2 and Its Interfaces

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Release : 2013-09-17
Genre : Science
Kind : eBook
Book Rating : 00X/5 ( reviews)

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Book Synopsis The Physics of SiO2 and Its Interfaces by : Sokrates T. Pantelides

Download or read book The Physics of SiO2 and Its Interfaces written by Sokrates T. Pantelides. This book was released on 2013-09-17. Available in PDF, EPUB and Kindle. Book excerpt: The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.

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