1# Library to Find Best eBook for Read
Author : Jatmiko Endro Suseno
Release : 2012
Genre : Metal oxide semiconductors
Kind : eBook
Book Rating : /5 ( reviews)
Book Synopsis Simulation and Modeling of Curved Channel Metal Oxide Semiconductor Field Effect Transistor by : Jatmiko Endro Suseno
Download or read book Simulation and Modeling of Curved Channel Metal Oxide Semiconductor Field Effect Transistor written by Jatmiko Endro Suseno. This book was released on 2012. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jatmiko Endro Suseno
Release : 2012
Genre : Metal oxide semiconductors
Kind : eBook
Book Rating : /5 ( reviews)
Book Synopsis Simulation and Modeling of Curved Channel Metal Oxide Semiconductor Field Effect Transisto by : Jatmiko Endro Suseno
Download or read book Simulation and Modeling of Curved Channel Metal Oxide Semiconductor Field Effect Transisto written by Jatmiko Endro Suseno. This book was released on 2012. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Shubham Sahay
Release : 2019-02-27
Genre : Technology & Engineering
Kind : eBook
Book Rating : 532/5 ( reviews)
Book Synopsis Junctionless Field-Effect Transistors by : Shubham Sahay
Download or read book Junctionless Field-Effect Transistors written by Shubham Sahay. This book was released on 2019-02-27. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Author : Keith R. Green
Release : 1993
Genre :
Kind : eBook
Book Rating : /5 ( reviews)
Book Synopsis A Model of the Short-channel, Metal-oxide-semiconductor Field- Effect Transistor for Pragmatic Mixed-mode Device/circuit Simulation by : Keith R. Green
Download or read book A Model of the Short-channel, Metal-oxide-semiconductor Field- Effect Transistor for Pragmatic Mixed-mode Device/circuit Simulation written by Keith R. Green. This book was released on 1993. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Christian C. Enz
Release : 2006-08-14
Genre : Technology & Engineering
Kind : eBook
Book Rating : 452/5 ( reviews)
Book Synopsis Charge-Based MOS Transistor Modeling by : Christian C. Enz
Download or read book Charge-Based MOS Transistor Modeling written by Christian C. Enz. This book was released on 2006-08-14. Available in PDF, EPUB and Kindle. Book excerpt: Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
