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Simulation and Design of Germanium-based Mosfets for Channel Lengths of 100 Nm and BelowW

2007
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Release : 2007
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Book Synopsis Simulation and Design of Germanium-based Mosfets for Channel Lengths of 100 Nm and BelowW by :

Download or read book Simulation and Design of Germanium-based Mosfets for Channel Lengths of 100 Nm and BelowW written by . This book was released on 2007. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this study is to examine the performance capabilities and scaling behavior of short channel Ge-based n-MOSFETs using a commercial numerical device simulator from ISE Corporation. This thesis will describe the results of DC and small signal AC simulations of the devices transistor characteristics and compare them with those for a silicon device of the same geometry and size. We will also examine the effects of variations in the device structure on the Ge MOSFETs performance, including the transconductance and high frequency response.

Simulation Study of Device Characteristics and Short Channel Effects of Nanoscale Germanium Channel Double-gate MOSFETs

2008
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Release : 2008
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Book Synopsis Simulation Study of Device Characteristics and Short Channel Effects of Nanoscale Germanium Channel Double-gate MOSFETs by : Divya Gangadharan

Download or read book Simulation Study of Device Characteristics and Short Channel Effects of Nanoscale Germanium Channel Double-gate MOSFETs written by Divya Gangadharan. This book was released on 2008. Available in PDF, EPUB and Kindle. Book excerpt: In the endeavor to increase integrated circuit chip densities and improve performance, MOSFET dimensions have been rapidly decreasing over the past four decades. In the next decade, gate (channel) lengths will be scaled to 10 nm and possibly lower. A shorter channel enables faster switching, however new effects come into play at these nanoscale dimensions that are detrimental to transistor performance. These effects called Short Channel Effects (SCEs) are important criteria when designing a device for operation at the nanoscale regime. Device design can involve changing the device structure as well as the material parameters of the device. Using a Double-Gate structure for MOSFETs can be very effective in controlling short channel effects since the double gate structure offers superior gate control of the channel. Germanium is a very attractive channel material for MOSFETs since it can offer higher transconductance due to its superior electron and hole mobilities. In this simulation study, the potentials and limitations of using a Germanium channel Double-Gate MOSFET at nanoscale dimensions is investigated.

Simulation of Semiconductor Processes and Devices 2004

2012-12-06 Technology & Engineering
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Release : 2012-12-06
Genre : Technology & Engineering
Kind : eBook
Book Rating : 249/5 ( reviews)

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Book Synopsis Simulation of Semiconductor Processes and Devices 2004 by : Gerhard Wachutka

Download or read book Simulation of Semiconductor Processes and Devices 2004 written by Gerhard Wachutka. This book was released on 2012-12-06. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.

Modeling of Electron Transport in Sub-100 Nm Channel Length Silicon MOSFETs

1995
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Release : 1995
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Book Synopsis Modeling of Electron Transport in Sub-100 Nm Channel Length Silicon MOSFETs by : Jarvis Benjamin Jacobs

Download or read book Modeling of Electron Transport in Sub-100 Nm Channel Length Silicon MOSFETs written by Jarvis Benjamin Jacobs. This book was released on 1995. Available in PDF, EPUB and Kindle. Book excerpt:

International Conference on Simulation of Semiconductor Processes and Devices

1997 Semiconductors
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Release : 1997
Genre : Semiconductors
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Book Synopsis International Conference on Simulation of Semiconductor Processes and Devices by :

Download or read book International Conference on Simulation of Semiconductor Processes and Devices written by . This book was released on 1997. Available in PDF, EPUB and Kindle. Book excerpt:

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