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Author : Center for Semiconductor Device Reliability Research
Release : 1992
Genre : Integrated circuits
Kind : eBook
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Book Synopsis Very Large Scale Integration Reliability Research by : Center for Semiconductor Device Reliability Research
Download or read book Very Large Scale Integration Reliability Research written by Center for Semiconductor Device Reliability Research. This book was released on 1992. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J. W. Lathrop
Release : 1985
Genre : Integrated circuits
Kind : eBook
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Book Synopsis VLSI Reliability Research by : J. W. Lathrop
Download or read book VLSI Reliability Research written by J. W. Lathrop. This book was released on 1985. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Chenming Hu
Release : 1986
Genre :
Kind : eBook
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Book Synopsis Research in VLSI Reliability by : Chenming Hu
Download or read book Research in VLSI Reliability written by Chenming Hu. This book was released on 1986. Available in PDF, EPUB and Kindle. Book excerpt: In order to increase the circuit density and speed of VLSI systems, microelectronic device geometry is shrinking from a few microns to submicron and beyond. This scaling has greatly heightened the need for a better understanding of the failure mechanisms affecting the long-term reliability of VLSI system and for improved methods of designing and testing for reliability. In contrast to production technologies and circuit performances, whose failures to meet specifications will be either obvious or relatively easily discovered before the circuits are incorporated into complex systems or missions, reliability failures cannot be easily or completely eliminated. When they do occur, reliability failures can be costly in many ways. The objective of this research is to gain basic scientific understanding of the mechanisms of the three leading hard failure modes: oxide wearout, hot-electron-induced degradations, and contact and metal failures. the basic understanding should lead to failure models and methods to improve reliability assurance through design, processing, and testing techniques. (Author).
Author : Behnam Ghavami
Release : 2020-10-13
Genre : Technology & Engineering
Kind : eBook
Book Rating : 105/5 ( reviews)
Book Synopsis Soft Error Reliability of VLSI Circuits by : Behnam Ghavami
Download or read book Soft Error Reliability of VLSI Circuits written by Behnam Ghavami. This book was released on 2020-10-13. Available in PDF, EPUB and Kindle. Book excerpt: This book is intended for readers who are interested in the design of robust and reliable electronic digital systems. The authors cover emerging trends in design of today’s reliable electronic systems which are applicable to safety-critical applications, such as automotive or healthcare electronic systems. The emphasis is on modeling approaches and algorithms for analysis and mitigation of soft errors in nano-scale CMOS digital circuits, using techniques that are the cornerstone of Computer Aided Design (CAD) of reliable VLSI circuits. The authors introduce software tools for analysis and mitigation of soft errors in electronic systems, which can be integrated easily with design flows. In addition to discussing soft error aware analysis techniques for combinational logic, the authors also describe new soft error mitigation strategies targeting commercial digital circuits. Coverage includes novel Soft Error Rate (SER) analysis techniques such as process variation aware SER estimation and GPU accelerated SER analysis techniques, in addition to SER reduction methods such as gate sizing and logic restructuring based SER techniques.
Author : Yusuf Leblebici
Release : 2012-12-06
Genre : Technology & Engineering
Kind : eBook
Book Rating : 507/5 ( reviews)
Book Synopsis Hot-Carrier Reliability of MOS VLSI Circuits by : Yusuf Leblebici
Download or read book Hot-Carrier Reliability of MOS VLSI Circuits written by Yusuf Leblebici. This book was released on 2012-12-06. Available in PDF, EPUB and Kindle. Book excerpt: As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.
