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Radiation Effects in Interfaces and Thin Films

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Release : 2016
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Kind : eBook
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Book Synopsis Radiation Effects in Interfaces and Thin Films by : Alexander Mairov

Download or read book Radiation Effects in Interfaces and Thin Films written by Alexander Mairov. This book was released on 2016. Available in PDF, EPUB and Kindle. Book excerpt: One of the key approaches to developing materials with greater radiation damage resistance is to introduce a large fraction of internal interfaces. Interfaces act as sinks for recombination of radiation-induced defects and as sites for accumulation of helium bubbles, thereby diverting them away from grain boundaries, where they can induce embrittlement. The beneficial role of interfaces in mitigating radiation damage has been demonstrated in nanoscale multilayered structures and in nanograined materials. Another more common example is oxide dispersion strengthened (ODS) steels and nanostructured ferritic alloys (NFA) where a fine distribution of particles (clusters) of varying stoichiometries (e.g., Y2Ti2O7, Y2TiO5, Y2O3, TiO2 and Y-Ti-O non-stoichiometric oxides) not only confer high creep strength, but also high radiation damage tolerance due to the large area of metal/oxide interfaces. However, the efficacy of these interfaces to act as defect sinks depends on their compositional and physical stability under radiation. With this background, this work focused on the stability of interfaces between Ti, TiO2, and Y2O3 thin film deposited on Fe-12%Cr substrates after irradiation with 5MeV Ni+2 ions at various temperatures. TEM and STEM-EDS methods were used to understand the compositional changes at the interfaces. Additionally, accumulation of implanted helium at epitaxial and non-epitaxial Fe/Y2O3 interfaces was also studied. Finally, the study was extended to study irradiation effects (up to 150 dpa) in novel Al2O3 nanoceramic films with immediate potential applications as coatings for corrosion protection in the harsh high temperature environments of Gen IV reactors. This research is expected to have implications in the development of radiation damage tolerant nanostructured alloys for nuclear reactors while also expanding the scientific knowledge-base in the area of radiation stability of interfaces in solids and protective coatings.

Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices

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Release : 2004-07-29
Genre : Technology & Engineering
Kind : eBook
Book Rating : 153/5 ( reviews)

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Book Synopsis Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices by : Ronald D Schrimpf

Download or read book Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices written by Ronald D Schrimpf. This book was released on 2004-07-29. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.

New Insulators Devices and Radiation Effects

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Release : 1999-02-11
Genre : Technology & Engineering
Kind : eBook
Book Rating : 767/5 ( reviews)

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Book Synopsis New Insulators Devices and Radiation Effects by :

Download or read book New Insulators Devices and Radiation Effects written by . This book was released on 1999-02-11. Available in PDF, EPUB and Kindle. Book excerpt: Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.

Ionizing Radiation Effects in MOS Devices and Circuits

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Release : 1989-04-18
Genre : Technology & Engineering
Kind : eBook
Book Rating : 936/5 ( reviews)

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Book Synopsis Ionizing Radiation Effects in MOS Devices and Circuits by : T. P. Ma

Download or read book Ionizing Radiation Effects in MOS Devices and Circuits written by T. P. Ma. This book was released on 1989-04-18. Available in PDF, EPUB and Kindle. Book excerpt: The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.

السقطة

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Author :
Release : 1964
Genre :
Kind : eBook
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Book Synopsis السقطة by :

Download or read book السقطة written by . This book was released on 1964. Available in PDF, EPUB and Kindle. Book excerpt:

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