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Numerical Simulation of Submicron Semiconductor Devices

1993-01-01 Mathematics
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Release : 1993-01-01
Genre : Mathematics
Kind : eBook
Book Rating : 201/5 ( reviews)

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Book Synopsis Numerical Simulation of Submicron Semiconductor Devices by : Kazutaka Tomizawa

Download or read book Numerical Simulation of Submicron Semiconductor Devices written by Kazutaka Tomizawa. This book was released on 1993-01-01. Available in PDF, EPUB and Kindle. Book excerpt: Describes the basic theory of carrier transport, develops numerical algorithms used for transport problems or device simulations, and presents real-world examples of implementation.

Numerical Simulation of Semiconductor Structures

2013-10-21
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Release : 2013-10-21
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Kind : eBook
Book Rating : 257/5 ( reviews)

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Book Synopsis Numerical Simulation of Semiconductor Structures by : Abel Garcia-Barrientos

Download or read book Numerical Simulation of Semiconductor Structures written by Abel Garcia-Barrientos. This book was released on 2013-10-21. Available in PDF, EPUB and Kindle. Book excerpt: The investigation of new materials, devices and techniques to improve the performance of telecommunications, spectroscopy and radar systems applications, has caused that the study of non-stationary effects of space charge in semiconductor structures be a strategy research area in the field of high speed semiconductor devices. Therefore, this book focuses in the study of the non-stationary effects of the space charge in semiconductor structures, where the nonlinear wave interaction in active media may serve to improve the high-frequency performance of semiconductor devices.

Simulation of Semiconductor Devices and Processes

2012-12-06 Computers
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Release : 2012-12-06
Genre : Computers
Kind : eBook
Book Rating : 578/5 ( reviews)

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Book Synopsis Simulation of Semiconductor Devices and Processes by : Siegfried Selberherr

Download or read book Simulation of Semiconductor Devices and Processes written by Siegfried Selberherr. This book was released on 2012-12-06. Available in PDF, EPUB and Kindle. Book excerpt: The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.

Numerical Models for the Simulation of Nonstationary Effects in Submicron Semiconductor Devices

1992
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Release : 1992
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Book Synopsis Numerical Models for the Simulation of Nonstationary Effects in Submicron Semiconductor Devices by : Edwin Chihchuan Kan

Download or read book Numerical Models for the Simulation of Nonstationary Effects in Submicron Semiconductor Devices written by Edwin Chihchuan Kan. This book was released on 1992. Available in PDF, EPUB and Kindle. Book excerpt: Numerical modeling of nonstationary transport effects using partial differential equations derived from the Boltzmann Transport Equation (BTE) is investigated. Augmented drift-diffusion (ADD) models and improved energy transport (ET) models for submicron device simulation are constructed and numerically implemented. Analytical derivation of the length coefficient for the ADD models is presented for both single- and multi-valley approximations. Results of typical $nsp+ - n - nsp+$ ballistic diodes for Si and GaAs are presented. The extension of the ADD model to two dimensions is then formulated, and the implementation problems with the standard box integration method, as used in conventional drift-diffusion (DD) models, are examined. Improved ET models are derived from the zeroth and second moments of the Boltzmann transport equation and from the presumed function form of the even part of the distribution function. Energy band nonparabolicity and non-Maxwellian distribution effects are included to first order. The ET models are amenable to an efficient self-consistent discretization, with standard techniques, taking advantage of the similarity between current and energy flow equations. Numerical results for ballistic diodes and MOSFETs are presented. Typical spurious velocity overshoot spikes, obtained in conventional hydrodynamics simulations of ballistic diodes, are virtually eliminated. By comparing the formulation of the ET and HD models, we find that the spurious spike is caused by the momentum relaxation time approximation and the resulting form of the thermal diffusion terms. Calculations based on a two-carrier-population model, at the anode junction, further confirm our analysis of the spurious spike.

Hierarchical Device Simulation

2012-12-06 Technology & Engineering
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Release : 2012-12-06
Genre : Technology & Engineering
Kind : eBook
Book Rating : 863/5 ( reviews)

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Book Synopsis Hierarchical Device Simulation by : Christoph Jungemann

Download or read book Hierarchical Device Simulation written by Christoph Jungemann. This book was released on 2012-12-06. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.

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