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Nanoscale Quantification of Stress and Strain in III-V Semiconducting Nanostructures

2015
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Release : 2015
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Book Synopsis Nanoscale Quantification of Stress and Strain in III-V Semiconducting Nanostructures by :

Download or read book Nanoscale Quantification of Stress and Strain in III-V Semiconducting Nanostructures written by . This book was released on 2015. Available in PDF, EPUB and Kindle. Book excerpt: III-V semiconducting nanostructures present a promising platform for the realization of advanced optoelectronic devices due to their superior intrinsic materials properties including direct band gap energies that span the visible light spectrum and high carrier mobilities. Additionally, the inherently high surface-to-volume ratio of nanostructures allows for the efficient relaxation of stress enabling the realization of defect free heterostructures between highly mismatched materials. As a result, nanostructures are being investigated as a route towards the direct integration of III-V materials on silicon substrates and as platforms for the fabrication of novel heterostructures not achievable in a thin film geometry. Due to their small size, however, many of the methods used to calculate stress and strain in 2D bulk systems are no longer valid as free surface effects allow for relaxation creating more complicated stress and strain fields. These inhomogeneous strain fields could have significant impacts on both device fabrication and operation. Therefore, it will be vital to develop techniques that can accurately predict and measure the stress and strain in individual nanostructures. In this thesis, we demonstrate how the combination of advanced transmission electron microscopy (TEM) and continuum modeling techniques can provide a quantitative understanding of the complex strain fields in nanostructures with high spatial resolutions. Using techniques such as convergent beam electron diffraction, nanobeam electron diffraction, and geometric phase analysis we quantify and map the strain fields in top-down fabricated InAlN/GaN high electron mobility transistor structures and GaAs/GaAsP core-shell nanowires grown by a particle-mediated vapor-liquid-solid mechanism. By comparing our experimental results to strain fields calculated by finite element analysis, we show that these techniques can provide quantitative strain information with spatial resolutions on the order of 1 nm. Our results highlight the importance of nanoscale characterization of strain in nanostructures and point to future opportunities for strain engineering to precisely tune the behavior and operation of these highly relevant structures.

Stress and Strain Engineering at Nanoscale in Semiconductor Devices

2023-09-25 Nanoelectronics
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Release : 2023-09-25
Genre : Nanoelectronics
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Book Rating : 339/5 ( reviews)

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Book Synopsis Stress and Strain Engineering at Nanoscale in Semiconductor Devices by : C. K. Maiti

Download or read book Stress and Strain Engineering at Nanoscale in Semiconductor Devices written by C. K. Maiti. This book was released on 2023-09-25. Available in PDF, EPUB and Kindle. Book excerpt: Based on 3D process and device simulations with mechanical stress simulations by finite element techniques, this book explains performance assessment of nanoscale devices with strained SiGe and other stressors. It explains the process-induced stress transfer and developments at 7nm technology and below node in the area of strain-engineered devices.

Nanoscale Electronic and Thermal Transport Properties in III-V/RE-V Nanostructures

2013
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Release : 2013
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Book Synopsis Nanoscale Electronic and Thermal Transport Properties in III-V/RE-V Nanostructures by : Keun Woo Park

Download or read book Nanoscale Electronic and Thermal Transport Properties in III-V/RE-V Nanostructures written by Keun Woo Park. This book was released on 2013. Available in PDF, EPUB and Kindle. Book excerpt: The incorporation of rare earth-V (RE-V) semimetallic nanoparticles embedded in III-V compound semiconductors is of great interest for applications in solid-state devices including multijunction tandem solar cells, thermoelectric devices, and fast photoconductors for terahertz radiation sources and receivers. With regard to those nanoparticle roles in device applications and material itself, electrical and thermal properties of embedded RE-V nanoparticles, including nanoscale morphology, electronic structure, and electrical and thermal conductivity of such nanoparticles are essential to be understood to engineer their properties to optimize their influence on device performance. To understand embedded RE-V semimetallic nanostructures in III-V compound semiconductors, nanoscale characterization tools are essential for analysis their properties incorporated in compound semiconductors. In this dissertation, we used atomic force microscopy (AFM) with other secondary detection tools to investigate nanoscale material properties of semimetallic RE-V and GaAs heterostructures, grown by molecular beam epitaxy. We used scanning capacitance microscopy and conductive AFM techniques to understand electronic and electrical properties of ErAs/GaAs heterostructures. For the electrical properties, this thesis investigates details of statistical analysis of scanning capacitance and local conductivity images contrast to provide insights into (i) nanoparticle structure at length scales smaller than the nominal spatial resolution of the scanned probe measurement, and (ii) both lateral and vertical nanoparticle morphology at nanometer to atomic length scales, and their influence on electrical conductivity. To understand thermal properties of ErAs nanoparticles, in-plane and cross-sectional plane of ErAs/GaAs superlattice structure were investigated with a scanning probe microscopy technique implemented with 3[omega] method for thermal measurement. By performing detailed numerical modeling of thermal transport between thermal probe tip and employed samples, and estimation of additional phonon scattering induced by ErAs nanoparticles, we could understand influences of ErAs nanoparticles on the host GaAs thermal conductivity. Investigation of ErAs semimetallic nanostructure embedded in GaAs matrix with scanned probe microscopy provided detailed understanding of their electronic, electrical and thermal properties. In addition, this dissertation also demonstrates that an atomic force microscope with secondary detection techniques is promising apparatus to understand and investigate intrinsic properties of nanostructure materials, nanoscale charge transports, when the system is combined with detailed modeling and simulations.

Mechanical Stress on the Nanoscale

2011-12-07 Technology & Engineering
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Release : 2011-12-07
Genre : Technology & Engineering
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Book Rating : 551/5 ( reviews)

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Book Synopsis Mechanical Stress on the Nanoscale by : Margrit Hanbücken

Download or read book Mechanical Stress on the Nanoscale written by Margrit Hanbücken. This book was released on 2011-12-07. Available in PDF, EPUB and Kindle. Book excerpt: Bringing together experts from the various disciplines involved, this first comprehensive overview of the current level of stress engineering on the nanoscale is unique in combining the theoretical fundamentals with simulation methods, model systems and characterization techniques. Essential reading for researchers in microelectronics, optoelectronics, sensing, and photonics.

Surface Modification of III-V Nanostructures Studied by Low-temperature Scanning Tunneling Microscopy

2022
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Release : 2022
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Book Rating : 921/5 ( reviews)

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Book Synopsis Surface Modification of III-V Nanostructures Studied by Low-temperature Scanning Tunneling Microscopy by : Yi Liu

Download or read book Surface Modification of III-V Nanostructures Studied by Low-temperature Scanning Tunneling Microscopy written by Yi Liu. This book was released on 2022. Available in PDF, EPUB and Kindle. Book excerpt: In the past decade, driven by the demand for materials with high performance for next-generation semiconductor devices (e.g., for quantum computing), the exploration of III-V semiconductor materials and the design of improved devices based on these materials has extended to the nanometer scale, with several highlights in the studies of quantum wells, quantum dots, and nanowires (NW) in recent years. On the path of seeking smaller scale devices, the lateral scale is usually limited by the spatial resolution of the lithographic processes. Now, the challenge lies in the combination of semiconductor nanoscale structure with the desired electronic properties. Scaling down material synthesis to crystalline structures of only few atoms in size and precisely positioned in device configuration has not been realized so far. Moreover, the compatibility for large-scale industrial device processing is also challenging. In this dissertation, I present the surface characterization and studies of the modification of nanostructures on III-V semiconductor surfaces, with the techniques of low temperature scanning tunneling microscopy/spectroscopy (LT-STM/S) and X-ray photoelectron spectroscopy (XPS). Two main topics are Bi incorporation in GaAs (and InAs) surfaces and self-driven formation of nanostructures with atomic-scale precision. Different zinc blende and wurtzite crystal planes have been investigated, including the {11-20}- type facet which for GaAs and InAs uniquely exists on the side walls of NWs and nanoplatelets. The utilization of the tailored facets of NWs as templates for Bi-induced nanostructure formation has been explored as well. Bi-introduced low-dimensional nanostructures and exotic electronic states in III-V semiconductor systems have been investigated. The covalent bonds of Bi atoms in the self-formed Bi nanostructures on III-V substrates can vary depending on the substrate template and preparation condition, such as the Ga-Bi bonds in the 1D chain and 2D island nanostructures on Wz{11-20}-type facets on GaAs NWs. The possibility of tuning the self-formed III-V:Bi nanostructures in a more controllable way has been explored in this thesis. A significant high coverage of Bi on III-V semiconductor surface has been achieved. The observed variable bandgap and Bi-induced surface states are promising for applications in surface bandgap engineering and quantum technology components.

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