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Author : John Richard Davis
Release : 1981
Genre : Computers
Kind : eBook
Book Rating : 909/5 ( reviews)
Book Synopsis Instabilities in MOS Devices by : John Richard Davis
Download or read book Instabilities in MOS Devices written by John Richard Davis. This book was released on 1981. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Souvik Mahapatra
Release : 2015-08-05
Genre : Technology & Engineering
Kind : eBook
Book Rating : 082/5 ( reviews)
Book Synopsis Fundamentals of Bias Temperature Instability in MOS Transistors by : Souvik Mahapatra
Download or read book Fundamentals of Bias Temperature Instability in MOS Transistors written by Souvik Mahapatra. This book was released on 2015-08-05. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
Author :
Release : 2005
Genre :
Kind : eBook
Book Rating : /5 ( reviews)
Book Synopsis Negative-bias-temperature Instability (NBTI) in Mos Devices by :
Download or read book Negative-bias-temperature Instability (NBTI) in Mos Devices written by . This book was released on 2005. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Release : 1999-02-11
Genre : Technology & Engineering
Kind : eBook
Book Rating : 767/5 ( reviews)
Book Synopsis New Insulators Devices and Radiation Effects by :
Download or read book New Insulators Devices and Radiation Effects written by . This book was released on 1999-02-11. Available in PDF, EPUB and Kindle. Book excerpt: Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.
Author : Souvik Mahapatra
Release : 2021-11-25
Genre : Technology & Engineering
Kind : eBook
Book Rating : 200/5 ( reviews)
Book Synopsis Recent Advances in PMOS Negative Bias Temperature Instability by : Souvik Mahapatra
Download or read book Recent Advances in PMOS Negative Bias Temperature Instability written by Souvik Mahapatra. This book was released on 2021-11-25. Available in PDF, EPUB and Kindle. Book excerpt: This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.
