1# Library to Find Best eBook for Read
Author :
Release : 2013
Genre :
Kind : eBook
Book Rating : /5 ( reviews)
Book Synopsis High Temperature Annealing of the Interface State Component of Negative-Bias Temperature Instability (NBTI) in MOSFET Devices by :
Download or read book High Temperature Annealing of the Interface State Component of Negative-Bias Temperature Instability (NBTI) in MOSFET Devices written by . This book was released on 2013. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Tibor Grasser
Release : 2013-10-22
Genre : Technology & Engineering
Kind : eBook
Book Rating : 096/5 ( reviews)
Book Synopsis Bias Temperature Instability for Devices and Circuits by : Tibor Grasser
Download or read book Bias Temperature Instability for Devices and Circuits written by Tibor Grasser. This book was released on 2013-10-22. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
Author : Souvik Mahapatra
Release : 2021-11-25
Genre : Technology & Engineering
Kind : eBook
Book Rating : 200/5 ( reviews)
Book Synopsis Recent Advances in PMOS Negative Bias Temperature Instability by : Souvik Mahapatra
Download or read book Recent Advances in PMOS Negative Bias Temperature Instability written by Souvik Mahapatra. This book was released on 2021-11-25. Available in PDF, EPUB and Kindle. Book excerpt: This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.
Author :
Release : 2006
Genre : Reliability
Kind : eBook
Book Rating : /5 ( reviews)
Book Synopsis Negative Bias Temperature Instability (NBTI) Experiment by :
Download or read book Negative Bias Temperature Instability (NBTI) Experiment written by . This book was released on 2006. Available in PDF, EPUB and Kindle. Book excerpt: The phenomenon known as Negative Bias Temperature Instability (NBTI) impacts the operational characteristics of Complementary Metal Oxide Semiconductor (CMOS) devices, and tends to have a stronger effect on p-channel devices. This instability is observed with an applied "on" biasing during normal operation and can be accelerated with thermal stress. A normal applied electrical bias on CMOS transistors can lead to the generation of interface states at the junction of the gate oxide and the transistor channel. The hydrogen that normally passivates the interface states can diffuse away from the interface. As a result, the threshold voltage and transconductance will change. These interface states can be measured to determine the susceptibility to NBTI of the devices. For this purpose, a charge pumping experiment and other On-the-Fly techniques at certain temperatures can provide the interface state density and other valuable data. NBTI can impact current technological fabrication processes, such as those provided to the government from IBM. This paper explains this testing of current submicron transistor technology that will be used for military applications.
Author :
Release : 2013
Genre :
Kind : eBook
Book Rating : /5 ( reviews)
Book Synopsis Similarities Between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices by :
Download or read book Similarities Between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices written by . This book was released on 2013. Available in PDF, EPUB and Kindle. Book excerpt:
