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Gallium Nitride And Silicon Carbide Power Devices

2016-12-12 Technology & Engineering
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Release : 2016-12-12
Genre : Technology & Engineering
Kind : eBook
Book Rating : 424/5 ( reviews)

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Book Synopsis Gallium Nitride And Silicon Carbide Power Devices by : B Jayant Baliga

Download or read book Gallium Nitride And Silicon Carbide Power Devices written by B Jayant Baliga. This book was released on 2016-12-12. Available in PDF, EPUB and Kindle. Book excerpt: During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.

Gallium Nitride and Silicon Carbide Power Devices

2017
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Release : 2017
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Kind : eBook
Book Rating : 414/5 ( reviews)

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Book Synopsis Gallium Nitride and Silicon Carbide Power Devices by : B. Jayant Baliga

Download or read book Gallium Nitride and Silicon Carbide Power Devices written by B. Jayant Baliga. This book was released on 2017. Available in PDF, EPUB and Kindle. Book excerpt:

Vertical GaN and SiC Power Devices

2018-04-30 Technology & Engineering
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Release : 2018-04-30
Genre : Technology & Engineering
Kind : eBook
Book Rating : 296/5 ( reviews)

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Book Synopsis Vertical GaN and SiC Power Devices by : Kazuhiro Mochizuki

Download or read book Vertical GaN and SiC Power Devices written by Kazuhiro Mochizuki. This book was released on 2018-04-30. Available in PDF, EPUB and Kindle. Book excerpt: This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.

Gallium Nitride and Silicon Carbide Power Technologies 4

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Kind : eBook
Book Rating : 442/5 ( reviews)

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Book Synopsis Gallium Nitride and Silicon Carbide Power Technologies 4 by : K. Shenai

Download or read book Gallium Nitride and Silicon Carbide Power Technologies 4 written by K. Shenai. This book was released on . Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Carbide Power Devices

2006-01-05 Technology & Engineering
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Release : 2006-01-05
Genre : Technology & Engineering
Kind : eBook
Book Rating : 521/5 ( reviews)

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Book Synopsis Silicon Carbide Power Devices by : B. Jayant Baliga

Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga. This book was released on 2006-01-05. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.

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