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Ferroelectric-Gate Field Effect Transistor Memories

2016-09-02 Technology & Engineering
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Release : 2016-09-02
Genre : Technology & Engineering
Kind : eBook
Book Rating : 41X/5 ( reviews)

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Book Synopsis Ferroelectric-Gate Field Effect Transistor Memories by : Byung-Eun Park

Download or read book Ferroelectric-Gate Field Effect Transistor Memories written by Byung-Eun Park. This book was released on 2016-09-02. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Ferroelectric-Gate Field Effect Transistor Memories

2020-03-23 Technology & Engineering
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Release : 2020-03-23
Genre : Technology & Engineering
Kind : eBook
Book Rating : 124/5 ( reviews)

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Book Synopsis Ferroelectric-Gate Field Effect Transistor Memories by : Byung-Eun Park

Download or read book Ferroelectric-Gate Field Effect Transistor Memories written by Byung-Eun Park. This book was released on 2020-03-23. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Ferroelectric Field Effect Transistor for Memory and Switch Applications

2011
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Release : 2011
Genre :
Kind : eBook
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Book Synopsis Ferroelectric Field Effect Transistor for Memory and Switch Applications by : Giovanni Antonio Salvatore

Download or read book Ferroelectric Field Effect Transistor for Memory and Switch Applications written by Giovanni Antonio Salvatore. This book was released on 2011. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

2015-06-30 Science
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Release : 2015-06-30
Genre : Science
Kind : eBook
Book Rating : 032/5 ( reviews)

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Book Synopsis Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films by : Ekaterina Yurchuk

Download or read book Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films written by Ekaterina Yurchuk. This book was released on 2015-06-30. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

Tunneling Field Effect Transistors

2023-06-08 Technology & Engineering
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Release : 2023-06-08
Genre : Technology & Engineering
Kind : eBook
Book Rating : 809/5 ( reviews)

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Book Synopsis Tunneling Field Effect Transistors by : T. S. Arun Samuel

Download or read book Tunneling Field Effect Transistors written by T. S. Arun Samuel. This book was released on 2023-06-08. Available in PDF, EPUB and Kindle. Book excerpt: This book will give insight into emerging semiconductor devices from their applications in electronic circuits, which form the backbone of electronic equipment. It provides desired exposure to the ever-growing field of low-power electronic devices and their applications in nanoscale devices, memory design, and biosensing applications. Tunneling Field Effect Transistors: Design, Modeling and Applications brings researchers and engineers from various disciplines of the VLSI domain to together tackle the emerging challenges in the field of nanoelectronics and applications of advanced low-power devices. The book begins by discussing the challenges of conventional CMOS technology from the perspective of low-power applications, and it also reviews the basic science and developments of subthreshold swing technology and recent advancements in the field. The authors discuss the impact of semiconductor materials and architecture designs on TFET devices and the performance and usage of FET devices in various domains such as nanoelectronics, Memory Devices, and biosensing applications. They also cover a variety of FET devices, such as MOSFETs and TFETs, with various structures based on the tunneling transport phenomenon. The contents of the book have been designed and arranged in such a way that Electrical Engineering students, researchers in the field of nanodevices and device-circuit codesign, as well as industry professionals working in the domain of semiconductor devices, will find the material useful and easy to follow.

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