1# Library to Find Best eBook for Read
Author : Jeff J. Peterson
Release : 2002
Genre :
Kind : eBook
Book Rating : /5 ( reviews)
Book Synopsis Electronic and Material Characterization of SiGe and SiGeC Epitaxial Layers by : Jeff J. Peterson
Download or read book Electronic and Material Characterization of SiGe and SiGeC Epitaxial Layers written by Jeff J. Peterson. This book was released on 2002. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter John Bjeletich
Release : 2004
Genre :
Kind : eBook
Book Rating : /5 ( reviews)
Book Synopsis Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications by : Peter John Bjeletich
Download or read book Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications written by Peter John Bjeletich. This book was released on 2004. Available in PDF, EPUB and Kindle. Book excerpt:
Author : A. Baldereschi
Release : 1988
Genre : Compound semiconductors
Kind : eBook
Book Rating : /5 ( reviews)
Book Synopsis Epitaxial Electronic Materials by : A. Baldereschi
Download or read book Epitaxial Electronic Materials written by A. Baldereschi. This book was released on 1988. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John D. Cressler
Release : 2017-12-19
Genre : Technology & Engineering
Kind : eBook
Book Rating : 797/5 ( reviews)
Book Synopsis SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by : John D. Cressler
Download or read book SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler. This book was released on 2017-12-19. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Author : Guilei Wang
Release : 2019-09-20
Genre : Technology & Engineering
Kind : eBook
Book Rating : 460/5 ( reviews)
Book Synopsis Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond by : Guilei Wang
Download or read book Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond written by Guilei Wang. This book was released on 2019-09-20. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
