Characterization of Devices and Materials for Gallium Nitride and Diamond Thermal Management Applications

2016 Electronics

Author : Bobby Logan Hancock
Release : 2016
Genre : Electronics
Kind : eBook
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Book Synopsis Characterization of Devices and Materials for Gallium Nitride and Diamond Thermal Management Applications by : Bobby Logan Hancock

Download or read book Characterization of Devices and Materials for Gallium Nitride and Diamond Thermal Management Applications written by Bobby Logan Hancock. This book was released on 2016. Available in PDF, EPUB and Kindle. Book excerpt: As trends progress toward higher power applications in GaN-based electronic and photonic devices, the issue of self-heating becomes a prominent concern. This is especially the case for high-brightness light-emitting diodes (LEDs) and high electron mobility transistors (HEMTs), where the bulk of power dissipation occurs within a small (sub-micron) region resulting in highly localized temperature rises during operation. Monitoring these thermal effects becomes critical as they significantly affect performance, reliability, and overall device lifetime. In response to these issues, diamond grown by chemical vapor deposition (CVD) has emerged as a promising material in III-nitride thermal management as a heat-spreading substrate due to its exceptional thermal conductivity. This work is aimed toward the characterization of self-heating and thermal management technologies in GaN electronic and photonic devices and their materials. The two main components of this dissertation include assessing self-heating in these devices through direct measurement of temperature rises in high-power LEDs and GaN HEMTs and qualifying thermal management approaches through the characterization of thermal conductivity and material quality in CVD diamond and its incorporation into GaN device layers. The purpose of this work is to further the understanding of thermal effects in III-nitride materials as well as provide useful contributions to the development of future thermal management technologies in GaN device applications.

Thermal Management of Gallium Nitride Electronics

2022-07-13 Technology & Engineering

Author : Marko Tadjer
Release : 2022-07-13
Genre : Technology & Engineering
Kind : eBook
Book Rating : 059/5 ( reviews)

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Book Synopsis Thermal Management of Gallium Nitride Electronics by : Marko Tadjer

Download or read book Thermal Management of Gallium Nitride Electronics written by Marko Tadjer. This book was released on 2022-07-13. Available in PDF, EPUB and Kindle. Book excerpt: Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs. Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies Touches on emerging, real-world applications for thermal management strategies in power electronics

Multiphysics Characterization of GaN Materials and Devices for Power Applications

2023

Author : Atse Julien Eric N'Dohi
Release : 2023
Genre :
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Book Synopsis Multiphysics Characterization of GaN Materials and Devices for Power Applications by : Atse Julien Eric N'Dohi

Download or read book Multiphysics Characterization of GaN Materials and Devices for Power Applications written by Atse Julien Eric N'Dohi. This book was released on 2023. Available in PDF, EPUB and Kindle. Book excerpt: Silicon power electronics has shown its limits due to its incapacity to sustain high voltage, high temperature and high frequency applications. Therefore, the need to resort to materials with larger band gap and solve silicon (Si) technological issues for high voltage operations has been getting more and more intense. Wide band gap materials such as Silicon Carbide (SiC), Gallium Nitride (GaN), and Diamond are very promising for power electronics because of their interesting physical properties such like high carrier mobility, high critical electric field and good thermal conductivity than Si that enable them to perform at high voltage and temperature domains. Semiconductors manufacturing companies indeed, consider them as potentials power or current converters, inverters and rectifers for improving home and industrial energy distribution and consumption in a better way. However, the road to get them into a larger mass production technology is still long because recent researches have shown that their performance is pinned by some physical phenomena such as structural defects appearance, strain and stress effects, doping and dopant control and effectivess and so on. Thus, ruling out these problems by a deep understanding of the physical mechanisms behind them is a key option in optimizing their performance. In this thesis, we confronted the physical and electrical properties of GaN material and devices through multiphysics and electrical characterizations approach such as micro Raman, cathodoluminescence and classical current-voltage I (V) measurements. The objective is to get an insight into the physical performance of these power electronic materials (SiC, GaN), especially of GaN based power devices due to their higher carrier mobility compared to SiC and their growing technology maturity for mass production and distribution; and suggest if possible, ways of optimizing their operating abilities at a micro level. The coupling of these characterization methods allow us to have a deep view of the physical mechanisms that support the high voltage or temperature operation of these GaN based materials and as well as help us to grab the discrepancy existing between physical theoretical parameters established through finite elements simulations and true experimental value.

Gallium Nitride Power Devices

2017-07-06 Science

Author : Hongyu Yu
Release : 2017-07-06
Genre : Science
Kind : eBook
Book Rating : 615/5 ( reviews)

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Book Synopsis Gallium Nitride Power Devices by : Hongyu Yu

Download or read book Gallium Nitride Power Devices written by Hongyu Yu. This book was released on 2017-07-06. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Power GaN Devices

2016-09-08 Technology & Engineering

Author : Matteo Meneghini
Release : 2016-09-08
Genre : Technology & Engineering
Kind : eBook
Book Rating : 994/5 ( reviews)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini. This book was released on 2016-09-08. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

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