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Analysis and Design of MOSFETs

1998-09-30 Science
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Release : 1998-09-30
Genre : Science
Kind : eBook
Book Rating : 015/5 ( reviews)

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Book Synopsis Analysis and Design of MOSFETs by : Juin Jei Liou

Download or read book Analysis and Design of MOSFETs written by Juin Jei Liou. This book was released on 1998-09-30. Available in PDF, EPUB and Kindle. Book excerpt: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

Analysis and Design of MOSFETs

1998 Science
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Release : 1998
Genre : Science
Kind : eBook
Book Rating : 515/5 ( reviews)

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Book Synopsis Analysis and Design of MOSFETs by : Juin J. Liou

Download or read book Analysis and Design of MOSFETs written by Juin J. Liou. This book was released on 1998. Available in PDF, EPUB and Kindle. Book excerpt: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

Analysis and Design of MOSFETs

2012-12-06 Technology & Engineering
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Release : 2012-12-06
Genre : Technology & Engineering
Kind : eBook
Book Rating : 152/5 ( reviews)

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Book Synopsis Analysis and Design of MOSFETs by : Juin Jei Liou

Download or read book Analysis and Design of MOSFETs written by Juin Jei Liou. This book was released on 2012-12-06. Available in PDF, EPUB and Kindle. Book excerpt: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

MOSFET Modeling for Circuit Analysis and Design

2007 Technology & Engineering
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Release : 2007
Genre : Technology & Engineering
Kind : eBook
Book Rating : 107/5 ( reviews)

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Book Synopsis MOSFET Modeling for Circuit Analysis and Design by : Carlos Galup-Montoro

Download or read book MOSFET Modeling for Circuit Analysis and Design written by Carlos Galup-Montoro. This book was released on 2007. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

The Physics and Modeling of Mosfets

2008 Technology & Engineering
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Release : 2008
Genre : Technology & Engineering
Kind : eBook
Book Rating : 059/5 ( reviews)

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Book Synopsis The Physics and Modeling of Mosfets by : Mitiko Miura-Mattausch

Download or read book The Physics and Modeling of Mosfets written by Mitiko Miura-Mattausch. This book was released on 2008. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

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